H2N6718V NPN Transistor

The H2N6718V is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the H2N6718V transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The H2N6718V transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the H2N6718V transistor as follows.

H2N6718V Transistor Specification

Transistor Code		H2N6718V
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO-126ML
Collector Power Dissipation (Maximum)	PC	1.6W
Collector-Base Voltage (Maximum)	VCB	100V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		50
Transition Frequency	FT	50MHz
Collector Capacitance	CC	20pF

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