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H2717 NPN Transistor

The H2717 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the H2717 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The H2717 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the H2717 transistor as follows.

Circuit diagram symbol of the H2717 transistor

H2717 Transistor Specification

Transistor Code H2717
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO92
Collector Power Dissipation (Maximum) PC 0.3W
Collector-Base Voltage (Maximum) VCB 30V
Collector-Emitter Voltage (Maximum) VCE 25V
Collector Current (Maximum) IC 0.05A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 4V
Forward Current Transfer Ratio (hFE Value) 40
Transition Frequency FT 300MHz
Collector Capacitance CC 2pF

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