H2682 NPN Transistor

The H2682 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the H2682 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The H2682 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the H2682 transistor as follows.

H2682 Transistor Specification

Transistor Code		H2682
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO126ML
Collector Power Dissipation (Maximum)	PC	8W
Collector-Base Voltage (Maximum)	VCB	180V
Collector-Emitter Voltage (Maximum)	VCE	180V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	200(TYP)MHz
Collector Capacitance	CC	3.2pF

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