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H1959 NPN Transistor

The H1959 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the H1959 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The H1959 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the H1959 transistor as follows.

Circuit diagram symbol of the H1959 transistor

H1959 Transistor Specification

Transistor Code H1959
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO92
Collector Power Dissipation (Maximum) PC 0.5W
Collector-Base Voltage (Maximum) VCB 35V
Collector-Emitter Voltage (Maximum) VCE 30V
Collector Current (Maximum) IC 0.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 70
Transition Frequency FT 300(TYP)MHz
Collector Capacitance CC 7pF

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