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H13003DL NPN Transistor

The H13003DL is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the H13003DL transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The H13003DL transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the H13003DL transistor as follows.

Circuit diagram symbol of the H13003DL transistor

H13003DL Transistor Specification

Transistor Code H13003DL
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO126D
Collector Power Dissipation (Maximum) PC 27W
Collector-Base Voltage (Maximum) VCB 400V
Collector-Emitter Voltage (Maximum) VCE 200V
Collector Current (Maximum) IC 4A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 9V
Forward Current Transfer Ratio (hFE Value) 15
Transition Frequency FT 5MHz

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More Transistors Datasheets in TO126D Package

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