H1061 NPN Transistor

The H1061 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the H1061 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The H1061 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the H1061 transistor as follows.

H1061 Transistor Specification

Transistor Code		H1061
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220AB
Collector Power Dissipation (Maximum)	PC	40W
Collector-Base Voltage (Maximum)	VCB	100V
Collector-Emitter Voltage (Maximum)	VCE	80V
Collector Current (Maximum)	IC	4A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		60
Transition Frequency	FT	10MHz
Collector Capacitance	CC	40pF

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