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H1061 NPN Transistor

The H1061 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the H1061 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The H1061 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the H1061 transistor as follows.

Circuit diagram symbol of the H1061 transistor

H1061 Transistor Specification

Transistor Code H1061
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO220AB
Collector Power Dissipation (Maximum) PC 40W
Collector-Base Voltage (Maximum) VCB 100V
Collector-Emitter Voltage (Maximum) VCE 80V
Collector Current (Maximum) IC 4A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 60
Transition Frequency FT 10MHz
Collector Capacitance CC 40pF

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