The GTM115G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the GTM115G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The GTM115G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.
Circuit diagram symbol of the GTM115G transistor as follows.
| Transistor Code | GTM115G | |
|---|---|---|
| Transistor Type | BJT | |
| Transistor Polarity | PNP | |
| Transistor Material | Germanium(GE) | |
| Collector Power Dissipation (Maximum) | PC | 0.05W |
| Collector-Base Voltage (Maximum) | VCB | 30V |
| Collector Current (Maximum) | IC | 0.03A |
| Operating Junction Temperature (Maximum) | TJ | 80°C |
| Emitter-Base Voltage (Maximum) | VEB | 20V |
| Forward Current Transfer Ratio (hFE Value) | 60 | |
| Transition Frequency | FT | 1MHz |
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