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GT813B PNP Transistor

The GT813B is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the GT813B transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GT813B transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the GT813B transistor as follows.

Circuit diagram symbol of the GT813B transistor

GT813B Transistor Specification

Transistor Code GT813B
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Germanium(GE)
Collector Power Dissipation (Maximum) PC 50W
Collector-Emitter Voltage (Maximum) VCE 125V
Collector Current (Maximum) IC 40A
Operating Junction Temperature (Maximum) TJ 85°C
Emitter-Base Voltage (Maximum) VEB 2V
Forward Current Transfer Ratio (hFE Value) 10

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