GT8100 PNP Transistor

The GT8100 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the GT8100 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GT8100 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the GT8100 transistor as follows.

GT8100 Transistor Specification

Transistor Code		GT8100
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	120W
Collector-Emitter Voltage (Maximum)	VCE	45V
Collector Current (Maximum)	IC	12A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	3V
Forward Current Transfer Ratio (hFE Value)		750
Transition Frequency	FT	10MHz

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