The GT806V is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the GT806V transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The GT806V transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.
Circuit diagram symbol of the GT806V transistor as follows.
| Transistor Code | GT806V | |
|---|---|---|
| Transistor Type | BJT | |
| Transistor Polarity | PNP | |
| Transistor Material | Germanium(GE) | |
| Collector Power Dissipation (Maximum) | PC | 30W |
| Collector-Emitter Voltage (Maximum) | VCE | 120V |
| Collector Current (Maximum) | IC | 15A |
| Operating Junction Temperature (Maximum) | TJ | 85°C |
| Emitter-Base Voltage (Maximum) | VEB | 1V |
| Forward Current Transfer Ratio (hFE Value) | 10 | |
| Transition Frequency | FT | 10MHz |
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