GT600 NPN Transistor

The GT600 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GT600 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GT600 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GT600 transistor as follows.

GT600 Transistor Specification

Transistor Code		GT600
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	250W
Collector-Base Voltage (Maximum)	VCB	85V
Collector-Emitter Voltage (Maximum)	VCE	80V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)	TJ	175°C
Forward Current Transfer Ratio (hFE Value)		30
Transition Frequency	FT	1MHz

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