GT400-8E NPN Transistor

The GT400-8E is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GT400-8E transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GT400-8E transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GT400-8E transistor as follows.

GT400-8E Transistor Specification

Transistor Code		GT400-8E
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		XM37
Collector Power Dissipation (Maximum)	PC	1540W
Collector-Base Voltage (Maximum)	VCB	800V
Collector-Emitter Voltage (Maximum)	VCE	800V
Collector Current (Maximum)	IC	300A
Operating Junction Temperature (Maximum)	TJ	125°C
Emitter-Base Voltage (Maximum)	VEB	3V
Forward Current Transfer Ratio (hFE Value)		50

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