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GT335G NPN Transistor

The GT335G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GT335G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GT335G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GT335G transistor as follows.

Circuit diagram symbol of the GT335G transistor

GT335G Transistor Specification

Transistor Code GT335G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Germanium(GE)
Collector Power Dissipation (Maximum) PC 0.2W
Collector-Base Voltage (Maximum) VCB 20V
Collector-Emitter Voltage (Maximum) VCE 19V
Collector Current (Maximum) IC 0.02A
Operating Junction Temperature (Maximum) TJ 80°C
Emitter-Base Voltage (Maximum) VEB 3V
Forward Current Transfer Ratio (hFE Value) 60
Transition Frequency FT 300MHz
Collector Capacitance CC 10pF

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