The GT329V is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GT329V transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The GT329V transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.
Circuit diagram symbol of the GT329V transistor as follows.
| Transistor Code | GT329V | |
|---|---|---|
| Transistor Type | BJT | |
| Transistor Polarity | NPN | |
| Transistor Material | Germanium(GE) | |
| Collector Power Dissipation (Maximum) | PC | 0.05W |
| Collector-Base Voltage (Maximum) | VCB | 10V |
| Collector-Emitter Voltage (Maximum) | VCE | 5V |
| Collector Current (Maximum) | IC | 0.02A |
| Operating Junction Temperature (Maximum) | TJ | 80°C |
| Emitter-Base Voltage (Maximum) | VEB | 1V |
| Forward Current Transfer Ratio (hFE Value) | 15 | |
| Transition Frequency | FT | 900MHz |
| Collector Capacitance | CC | 3pF |
UXPython is not the creator or an official representative of the GT329V NPN transistor. You can download the official GT329V NPN transistor datasheet to get more infromation about this transistor.
Note : Copyrighted materials belong to their creator or official representative.
Copyright © UXPython inc. All rights reserved.
Devoloped by UXPython.