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GT329G NPN Transistor

The GT329G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GT329G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GT329G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GT329G transistor as follows.

Circuit diagram symbol of the GT329G transistor

GT329G Transistor Specification

Transistor Code GT329G
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Germanium(GE)
Collector Power Dissipation (Maximum) PC 0.05W
Collector-Base Voltage (Maximum) VCB 10V
Collector-Emitter Voltage (Maximum) VCE 5V
Collector Current (Maximum) IC 0.02A
Operating Junction Temperature (Maximum) TJ 80°C
Emitter-Base Voltage (Maximum) VEB 1V
Forward Current Transfer Ratio (hFE Value) 15
Transition Frequency FT 600MHz
Collector Capacitance CC 2pF

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