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GT313V PNP Transistor

The GT313V is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the GT313V transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GT313V transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the GT313V transistor as follows.

Circuit diagram symbol of the GT313V transistor

GT313V Transistor Specification

Transistor Code GT313V
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Germanium(GE)
Collector Power Dissipation (Maximum) PC 0.1W
Collector-Base Voltage (Maximum) VCB 15V
Collector-Emitter Voltage (Maximum) VCE 15V
Collector Current (Maximum) IC 0.03A
Operating Junction Temperature (Maximum) TJ 70°C
Forward Current Transfer Ratio (hFE Value) 30
Transition Frequency FT 350MHz
Collector Capacitance CC 2.5pF

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