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GT311G PNP Transistor

The GT311G is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the GT311G transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GT311G transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the GT311G transistor as follows.

Circuit diagram symbol of the GT311G transistor

GT311G Transistor Specification

Transistor Code GT311G
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Germanium(GE)
Collector Power Dissipation (Maximum) PC 0.15W
Collector-Base Voltage (Maximum) VCB 12V
Collector-Emitter Voltage (Maximum) VCE 12V
Collector Current (Maximum) IC 0.05A
Operating Junction Temperature (Maximum) TJ 70°C
Emitter-Base Voltage (Maximum) VEB 2V
Forward Current Transfer Ratio (hFE Value) 30
Transition Frequency FT 450MHz
Collector Capacitance CC 2.5pF

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