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GT250-4D NPN Transistor

The GT250-4D is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GT250-4D transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GT250-4D transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GT250-4D transistor as follows.

Circuit diagram symbol of the GT250-4D transistor

GT250-4D Transistor Specification

Transistor Code GT250-4D
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package XM37
Collector Power Dissipation (Maximum) PC 770W
Collector-Base Voltage (Maximum) VCB 400V
Collector-Emitter Voltage (Maximum) VCE 400V
Collector Current (Maximum) IC 125A
Operating Junction Temperature (Maximum) TJ 125°C
Emitter-Base Voltage (Maximum) VEB 3V
Forward Current Transfer Ratio (hFE Value) 100

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More Transistors Datasheets in XM37 Package

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