GT250-4B NPN Transistor

The GT250-4B is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GT250-4B transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GT250-4B transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GT250-4B transistor as follows.

GT250-4B Transistor Specification

Transistor Code		GT250-4B
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		XM37
Collector Power Dissipation (Maximum)	PC	1330W
Collector-Base Voltage (Maximum)	VCB	400V
Collector-Emitter Voltage (Maximum)	VCE	400V
Collector Current (Maximum)	IC	250A
Operating Junction Temperature (Maximum)	TJ	125°C
Emitter-Base Voltage (Maximum)	VEB	3V
Forward Current Transfer Ratio (hFE Value)		100

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