The GT125E is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the GT125E transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The GT125E transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.
Circuit diagram symbol of the GT125E transistor as follows.
| Transistor Code | GT125E | |
|---|---|---|
| Transistor Type | BJT | |
| Transistor Polarity | PNP | |
| Transistor Material | Germanium(GE) | |
| Collector Power Dissipation (Maximum) | PC | 0.15W |
| Collector-Base Voltage (Maximum) | VCB | 35V |
| Collector Current (Maximum) | IC | 0.3A |
| Operating Junction Temperature (Maximum) | TJ | 90°C |
| Emitter-Base Voltage (Maximum) | VEB | 20V |
| Forward Current Transfer Ratio (hFE Value) | 45 | |
| Transition Frequency | FT | 1MHz |
UXPython is not the creator or an official representative of the GT125E PNP transistor. You can download the official GT125E PNP transistor datasheet to get more infromation about this transistor.
Note : Copyrighted materials belong to their creator or official representative.
Copyright © UXPython inc. All rights reserved.
Devoloped by UXPython.