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GSTU8035 NPN Transistor

The GSTU8035 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GSTU8035 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GSTU8035 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GSTU8035 transistor as follows.

Circuit diagram symbol of the GSTU8035 transistor

GSTU8035 Transistor Specification

Transistor Code GSTU8035
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO3
Collector Power Dissipation (Maximum) PC 188W
Collector-Base Voltage (Maximum) VCB 400V
Collector-Emitter Voltage (Maximum) VCE 350V
Collector Current (Maximum) IC 12A
Operating Junction Temperature (Maximum) TJ 175°C
Forward Current Transfer Ratio (hFE Value) 10
Transition Frequency FT 25MHz

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