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GSTSS8050 NPN Transistor

The GSTSS8050 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GSTSS8050 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GSTSS8050 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GSTSS8050 transistor as follows.

Circuit diagram symbol of the GSTSS8050 transistor

GSTSS8050 Transistor Specification

Transistor Code GSTSS8050
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO-92
Collector Power Dissipation (Maximum) PC 1W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 25V
Collector Current (Maximum) IC 1.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 85
Transition Frequency FT 100MHz

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