GSTS9014LT1 NPN Transistor

The GSTS9014LT1 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GSTS9014LT1 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GSTS9014LT1 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GSTS9014LT1 transistor as follows.

GSTS9014LT1 Transistor Specification

Transistor Code		GSTS9014LT1
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT-23
Transistor SMD Code		14Q
Collector Power Dissipation (Maximum)	PC	0.225W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	45V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		150

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