GSTR8030 NPN Transistor

The GSTR8030 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GSTR8030 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GSTR8030 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GSTR8030 transistor as follows.

GSTR8030 Transistor Specification

Transistor Code		GSTR8030
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	188W
Collector-Base Voltage (Maximum)	VCB	400V
Collector-Emitter Voltage (Maximum)	VCE	350V
Collector Current (Maximum)	IC	12A
Operating Junction Temperature (Maximum)	TJ	175°C
Forward Current Transfer Ratio (hFE Value)		10
Transition Frequency	FT	25MHz

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