GSDS50018 NPN Transistor

The GSDS50018 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GSDS50018 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GSDS50018 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GSDS50018 transistor as follows.

GSDS50018 Transistor Specification

Transistor Code		GSDS50018
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	100W
Collector-Base Voltage (Maximum)	VCB	180V
Collector-Emitter Voltage (Maximum)	VCE	180V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)	TJ	175°C
Forward Current Transfer Ratio (hFE Value)		8

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