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GSDR15020I NPN Transistor

The GSDR15020I is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GSDR15020I transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GSDR15020I transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GSDR15020I transistor as follows.

Circuit diagram symbol of the GSDR15020I transistor

GSDR15020I Transistor Specification

Transistor Code GSDR15020I
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO3
Collector Power Dissipation (Maximum) PC 100W
Collector-Base Voltage (Maximum) VCB 250V
Collector-Emitter Voltage (Maximum) VCE 200V
Collector Current (Maximum) IC 20A
Operating Junction Temperature (Maximum) TJ 175°C
Forward Current Transfer Ratio (hFE Value) 10
Transition Frequency FT 25MHz

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