GSDR10020I NPN Transistor

The GSDR10020I is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GSDR10020I transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GSDR10020I transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GSDR10020I transistor as follows.

GSDR10020I Transistor Specification

Transistor Code		GSDR10020I
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	100W
Collector-Base Voltage (Maximum)	VCB	250V
Collector-Emitter Voltage (Maximum)	VCE	200V
Collector Current (Maximum)	IC	15A
Operating Junction Temperature (Maximum)	TJ	175°C
Forward Current Transfer Ratio (hFE Value)		10
Transition Frequency	FT	25MHz

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