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GS9012E PNP Transistor

The GS9012E is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the GS9012E transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GS9012E transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the GS9012E transistor as follows.

Circuit diagram symbol of the GS9012E transistor

GS9012E Transistor Specification

Transistor Code GS9012E
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO92
Collector Power Dissipation (Maximum) PC 0.6W
Collector-Base Voltage (Maximum) VCB 25V
Collector-Emitter Voltage (Maximum) VCE 25V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 3V
Forward Current Transfer Ratio (hFE Value) 78
Transition Frequency FT 200MHz
Collector Capacitance CC 20pF

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