GS2017A NPN Transistor

The GS2017A is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GS2017A transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GS2017A transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GS2017A transistor as follows.

GS2017A Transistor Specification

Transistor Code		GS2017A
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO202
Collector Power Dissipation (Maximum)	PC	10W
Collector-Base Voltage (Maximum)	VCB	250V
Collector-Emitter Voltage (Maximum)	VCE	250V
Collector Current (Maximum)	IC	0.2A
Operating Junction Temperature (Maximum)	TJ	140°C
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	80MHz

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