GS2014 NPN Transistor

The GS2014 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GS2014 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GS2014 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GS2014 transistor as follows.

GS2014 Transistor Specification

Transistor Code		GS2014
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO202
Collector Power Dissipation (Maximum)	PC	12W
Collector-Base Voltage (Maximum)	VCB	200V
Collector-Emitter Voltage (Maximum)	VCE	180V
Collector Current (Maximum)	IC	0.2A
Operating Junction Temperature (Maximum)	TJ	140°C
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	50MHz

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