GS2013 NPN Transistor

The GS2013 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GS2013 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GS2013 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GS2013 transistor as follows.

GS2013 Transistor Specification

Transistor Code		GS2013
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	30W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	3A
Operating Junction Temperature (Maximum)	TJ	140°C
Forward Current Transfer Ratio (hFE Value)		60
Transition Frequency	FT	3MHz

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