GS112D PNP Transistor

The GS112D is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the GS112D transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GS112D transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the GS112D transistor as follows.

GS112D Transistor Specification

Transistor Code		GS112D
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Germanium(GE)
Package		TO39
Collector Power Dissipation (Maximum)	PC	0.083W
Collector-Base Voltage (Maximum)	VCB	20V
Collector Current (Maximum)	IC	0.21A
Operating Junction Temperature (Maximum)	TJ	90°C
Forward Current Transfer Ratio (hFE Value)		90

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