GS112B PNP Transistor

The GS112B is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the GS112B transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GS112B transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the GS112B transistor as follows.

GS112B Transistor Specification

Transistor Code		GS112B
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Germanium(GE)
Package		TO39
Collector Power Dissipation (Maximum)	PC	0.083W
Collector-Base Voltage (Maximum)	VCB	20V
Collector Current (Maximum)	IC	0.21A
Operating Junction Temperature (Maximum)	TJ	90°C
Forward Current Transfer Ratio (hFE Value)		30

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