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GS111E PNP Transistor

The GS111E is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the GS111E transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GS111E transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the GS111E transistor as follows.

Circuit diagram symbol of the GS111E transistor

GS111E Transistor Specification

Transistor Code GS111E
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Germanium(GE)
Package TO39
Collector Power Dissipation (Maximum) PC 0.083W
Collector-Base Voltage (Maximum) VCB 20V
Collector Current (Maximum) IC 0.21A
Operating Junction Temperature (Maximum) TJ 90°C
Forward Current Transfer Ratio (hFE Value) 120

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