GME6003 NPN Transistor

The GME6003 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GME6003 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GME6003 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GME6003 transistor as follows.

GME6003 Transistor Specification

Transistor Code		GME6003
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO106
Collector Power Dissipation (Maximum)	PC	0.36W
Collector-Base Voltage (Maximum)	VCB	25V
Collector-Emitter Voltage (Maximum)	VCE	25V
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		30
Transition Frequency	FT	150MHz
Collector Capacitance	CC	12pF

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