GME4001 NPN Transistor

The GME4001 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GME4001 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GME4001 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GME4001 transistor as follows.

GME4001 Transistor Specification

Transistor Code		GME4001
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO106
Collector Power Dissipation (Maximum)	PC	0.25W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	25V
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	10V
Forward Current Transfer Ratio (hFE Value)		60
Transition Frequency	FT	40MHz
Collector Capacitance	CC	3pF

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