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GME3001 NPN Transistor

The GME3001 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GME3001 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GME3001 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GME3001 transistor as follows.

Circuit diagram symbol of the GME3001 transistor

GME3001 Transistor Specification

Transistor Code GME3001
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO106
Collector Power Dissipation (Maximum) PC 0.25W
Collector-Base Voltage (Maximum) VCB 30V
Collector-Emitter Voltage (Maximum) VCE 12V
Operating Junction Temperature (Maximum) TJ 125°C
Forward Current Transfer Ratio (hFE Value) 20
Transition Frequency FT 600MHz
Collector Capacitance CC 3.5pF

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More Transistors Datasheets in TO106 Package

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