GME2001 NPN Transistor

The GME2001 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GME2001 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GME2001 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GME2001 transistor as follows.

GME2001 Transistor Specification

Transistor Code		GME2001
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO106
Collector Power Dissipation (Maximum)	PC	0.25W
Collector-Base Voltage (Maximum)	VCB	35V
Collector-Emitter Voltage (Maximum)	VCE	20V
Operating Junction Temperature (Maximum)	TJ	125°C
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	200MHz
Collector Capacitance	CC	5pF

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