GME1001 NPN Transistor

The GME1001 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GME1001 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GME1001 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GME1001 transistor as follows.

GME1001 Transistor Specification

Transistor Code		GME1001
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO106
Collector Power Dissipation (Maximum)	PC	0.25W
Collector-Base Voltage (Maximum)	VCB	45V
Collector-Emitter Voltage (Maximum)	VCE	45V
Operating Junction Temperature (Maximum)	TJ	125°C
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	300MHz
Collector Capacitance	CC	2.5pF

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