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GES930 NPN Transistor

The GES930 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GES930 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES930 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GES930 transistor as follows.

Circuit diagram symbol of the GES930 transistor

GES930 Transistor Specification

Transistor Code GES930
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO236
Collector Power Dissipation (Maximum) PC 0.3W
Collector-Base Voltage (Maximum) VCB 45V
Collector-Emitter Voltage (Maximum) VCE 45V
Collector Current (Maximum) IC 0.03A
Operating Junction Temperature (Maximum) TJ 200°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 100
Transition Frequency FT 30MHz
Collector Capacitance CC 6pF

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