GES6426 NPN Transistor

The GES6426 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GES6426 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES6426 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GES6426 transistor as follows.

GES6426 Transistor Specification

Transistor Code		GES6426
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.625W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	0.5A
Operating Junction Temperature (Maximum)	TJ	160°C
Emitter-Base Voltage (Maximum)	VEB	12V
Forward Current Transfer Ratio (hFE Value)		50000
Transition Frequency	FT	80MHz

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