GES6012 NPN Transistor

The GES6012 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GES6012 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES6012 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GES6012 transistor as follows.

GES6012 Transistor Specification

Transistor Code		GES6012
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.5W
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	0.8A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		200
Transition Frequency	FT	75MHz
Collector Capacitance	CC	12pF

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