GES6010A NPN Transistor

The GES6010A is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GES6010A transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES6010A transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GES6010A transistor as follows.

GES6010A Transistor Specification

Transistor Code		GES6010A
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.5W
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	0.8A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	60MHz
Collector Capacitance	CC	12pF

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