GES5826 NPN Transistor

The GES5826 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GES5826 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES5826 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GES5826 transistor as follows.

GES5826 Transistor Specification

Transistor Code		GES5826
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.36W
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		150
Transition Frequency	FT	50MHz
Collector Capacitance	CC	4pF

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