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GES5825 NPN Transistor

The GES5825 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GES5825 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES5825 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GES5825 transistor as follows.

Circuit diagram symbol of the GES5825 transistor

GES5825 Transistor Specification

Transistor Code GES5825
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO92
Collector Power Dissipation (Maximum) PC 0.36W
Collector-Emitter Voltage (Maximum) VCE 40V
Collector Current (Maximum) IC 0.1A
Operating Junction Temperature (Maximum) TJ 150°C
Forward Current Transfer Ratio (hFE Value) 100
Transition Frequency FT 50MHz
Collector Capacitance CC 4pF

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