GES5819 PNP Transistor

The GES5819 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the GES5819 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES5819 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the GES5819 transistor as follows.

GES5819 Transistor Specification

Transistor Code		GES5819
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.5W
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	0.75A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		150
Transition Frequency	FT	75MHz
Collector Capacitance	CC	16pF

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