GES5816 NPN Transistor

The GES5816 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GES5816 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES5816 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GES5816 transistor as follows.

GES5816 Transistor Specification

Transistor Code		GES5816
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO236
Collector Power Dissipation (Maximum)	PC	0.5W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	0.75A
Operating Junction Temperature (Maximum)	TJ	135°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	120MHz
Collector Capacitance	CC	15pF

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