GES5812 NPN Transistor

The GES5812 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GES5812 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES5812 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GES5812 transistor as follows.

GES5812 Transistor Specification

Transistor Code		GES5812
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.5W
Collector-Emitter Voltage (Maximum)	VCE	25V
Collector Current (Maximum)	IC	0.75A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		150
Transition Frequency	FT	75MHz
Collector Capacitance	CC	12pF

UXPython is not the creator or an official representative of the GES5812 NPN transistor. You can download the official GES5812 NPN transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in TO92 Package

BSV27L NPN Transistor 2SC3206 NPN Transistor 3DG4401 NPN Transistor FCS9012D PNP Transistor CD0014NG NPN Transistor BC183LA NPN Transistor MPS6542 NPN Transistor MPSH85 PNP Transistor TEC8013H NPN Transistor MPS708 NPN Transistor TEC9012I PNP Transistor NB121HJ PNP Transistor BC171B NPN Transistor 2SD261O NPN Transistor MPS6595 NPN Transistor 2SC1727 NPN Transistor 2SA1033 PNP Transistor SF817 PNP Transistor JE9016H NPN Transistor PN2894R PNP Transistor