GES5810 NPN Transistor

The GES5810 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GES5810 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES5810 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GES5810 transistor as follows.

GES5810 Transistor Specification

Transistor Code		GES5810
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.5W
Collector-Emitter Voltage (Maximum)	VCE	25V
Collector Current (Maximum)	IC	0.75A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		60
Transition Frequency	FT	60MHz
Collector Capacitance	CC	12pF

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