GES5550 NPN Transistor

The GES5550 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the GES5550 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The GES5550 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the GES5550 transistor as follows.

GES5550 Transistor Specification

Transistor Code		GES5550
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT23
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Base Voltage (Maximum)	VCB	160V
Collector-Emitter Voltage (Maximum)	VCE	140V
Collector Current (Maximum)	IC	0.6A
Operating Junction Temperature (Maximum)	TJ	175°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		60
Transition Frequency	FT	100MHz
Collector Capacitance	CC	10pF

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